Benefits and risks of finFETs compared to Bulk transistor.
Strengths
|
Weaknesses
|
Significant
reduction in power consumption (~50% over 32nm)
|
Very
restrictive design options, especially for analog – Transistor drive strength
is quantized to multiples of a single fin width
|
Faster
switching speed
|
Fin
width variability and edge quality leads to variability in threshold voltage
VT
|
Effective
speed/power trade-off possible with multi-Vt
|
Extra
manufacturing complexity and expense (~+3% according to Intel)
|
Availability of strain engineering
|
|
Opportunities
|
Threats
|
Low power makes 20nm technology deployable for mobile
applications
|
The potentially superior electrical performance and
simpler manufacturing of fully depleted SOI
|
Increase CPU speeds beyond 4GHz
|
|
Benefits and risks of FD-SOI compared to Bulk transistor.
Strengths
|
Weaknesses
|
Significant
reduction in power consumption
|
High
cost of initial wafers (~+10% over regular wafers, according to Intel)
|
Faster
switching speed
|
Limited
number of wafer suppliers
|
Easier,
standard manufacturing process
|
Variability
in VT due to variations in the thickness of silicon thin-film
|
Availability
of back-biasing to control VT
|
Multi-
VT more complex to implement
|
No
doping variability
|
Lack of
strain engineering
|
Layout
library compatible with existing bulktechnologies
|
Thin
channel limits drive strength
|
Opportunities
|
Threats
|
Simpler
and more flexible alternative to finFETs if wafer cost issue can be overcome
|
High
wafer cost threatens economic viability for wider market adoption
|
Better
controllability for analog applications
|
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